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| AP2322GN RoHS-compliant Product Advanced Power Electronics Corp. Capable of 1.8V gate drive Simple Drive Requirement Surface mount package S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 90m 2.5A Description SOT-23 G Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is widely used for commercial-industrial applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating 20 8 2.5 2.0 10 0.833 0.006 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 150 Unit /W Data and specifications subject to change without notice 1 200801112 AP2322GN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 20 0.3 - Typ. 0.02 2 7 0.7 2.5 6 12 16 4 350 55 48 3.2 Max. Units 90 120 150 1 1 100 11 560 4.8 V V/ m m m V S uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=1.6A VGS=2.5V, ID=1A VGS=1.8V, ID=0.3A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current VDS=VGS, ID=1mA VDS=5V, ID=2A VDS=20V, VGS=0V VGS=8V ID=2.2A VDS=16V VGS=4.5V VDS=10V ID=1A RG=3.3,VGS=5V RD=10 VGS=0V VDS=20V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=0.7A, VGS=0V IS=2A, VGS=0V, dI/dt=100A/s Min. - Typ. 20 13 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 360 /W when mounted on Min. copper pad. THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2 AP2322GN 10 10 T A =25 C 8 o 5.0V 4.0V 3.0V 2.5V V G = 2.0 V ID , Drain Current (A) T A = 150 C 8 o ID , Drain Current (A) 5.0V 4. 0 V 3.0 V 2.5V V G = 2.0 V 6 6 4 4 2 2 0 0 0.5 1 1.5 2 0 0 1 2 3 4 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 120 1.6 I D =0.3A T A =25 o C 1.4 100 I D = 1.6 A V G =4.5V Normalized RDS(ON) RDS(ON) (m) 1.2 80 1.0 60 0.8 40 0 2 4 6 8 10 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 0.8 5 4 3 Normalized VGS(th) (V) 1.4 T j =150 o C IS(A) T j =25 o C 0.6 0.4 2 0.2 1 0 0 0.2 0.4 0.6 0.8 1 1.2 0.0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2322GN f=1.0MHz 12 1000 I D =2.2A VGS , Gate to Source Voltage (V) 10 V DS =8V V DS =12V V DS =16V C (pF) C iss 8 6 100 4 C oss C rss 2 0 0 4 8 12 16 10 1 5 9 13 17 21 25 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 Normalized Thermal Response (Rthja) 0.2 10 0.1 0.1 1ms ID (A) 1 0.05 PDM t 0.01 10ms 0.1 T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 360/W 0.01 Single Pulse 100ms T A =25 C Single Pulse o 1s DC 1 10 100 0.01 0.1 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 10 V DS =5V 8 VG T j =25 o C T j =150 o C ID , Drain Current (A) QG 4.5V QGS 6 QGD 4 2 Charge 0 0 1 2 3 Q V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Circuit 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SOT-23 D D1 Millimeters SYMBOLS MIN NOM MAX A A1 E1 A2 E D1 1.00 0.00 0.10 0.30 1.70 2.70 2.40 1.40 1.15 -0.15 0.40 2.00 2.90 2.65 1.50 1.30 0.10 0.25 0.50 2.30 3.10 3.00 1.60 e D E E1 e 1.All Dimension Are In Millimeters. A A2 A1 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : SOT-23 Part Number : N0 N0XX Date Code : XX 5 |
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